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IXBL64N250 Datasheet - IXYS Corporation

Monolithic Bipolar MOS Transistor

IXBL64N250 Features

* z Silicon Chip on Direct-Copper Bond (DCB) Substrate z Isolated Mounting Surface z 2500V∼ Electrical Isolation z High Blocking Voltage z Low Switching Losses z High Current Handling Capability z Anti-Parallel Diode Advantages z High Power Density z Low Gate Drive Requirement Symbol Test Conditions

IXBL64N250 Datasheet (180.16 KB)

Preview of IXBL64N250 PDF

Datasheet Details

Part number:

IXBL64N250

Manufacturer:

IXYS Corporation

File Size:

180.16 KB

Description:

Monolithic bipolar mos transistor.
Advance Technical Information High Voltage, High Gain BiMOSFETTM Monolithic Bipolar MOS Transistor IXBL64N250 VCES IC110 VCE(sat) = = ≤ 2500V 46A.

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IXBL64N250 Monolithic Bipolar MOS Transistor IXYS Corporation

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