IXBL64N250 Datasheet - IXYS Corporation

IXBL64N250 Monolithic Bipolar MOS Transistor

Advance Technical Information High Voltage, High Gain BiMOSFETTM Monolithic Bipolar MOS Transistor IXBL64N250 VCES IC110 VCE(sat) = = ≤ 2500V 46A 3.0V (Electrically Isolated Tab) ISOPLUS i5-PakTM Symbol VCES VCGR VGES VGEM IC25 IICCM110 SSOA (RBSOA) T(SSCC SOA) PC TJ TJM Tstg TL TSOLD VISOL FC Weight Test Conditions Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient 2500 2500 ±25 ±35 V V V V TC = 25°C TTCC = 110°C = 25°C, 1ms VGE= 15V, TVJ = 12.

IXBL64N250 Features

* z Silicon Chip on Direct-Copper Bond (DCB) Substrate z Isolated Mounting Surface z 2500V∼ Electrical Isolation z High Blocking Voltage z Low Switching Losses z High Current Handling Capability z Anti-Parallel Diode Advantages z High Power Density z Low Gate Drive Requirement Symbol Test Conditions

IXBL64N250-IXYSCorporation.pdf