* z Silicon Chip on Direct-Copper Bond (DCB) Substrate z Isolated Mounting Surface z 2500V∼ Electrical Isolation z High Blocking Voltage z Low Switching Losses z High Current Handling Capability z Anti-Parallel Diode Advantages z High Power Density z Low Gate Drive Requirement Symbol Test Conditions
IXBL64N250 Datasheet (180.16 KB)
IXBL64N250
IXYS Corporation
180.16 KB
Monolithic bipolar mos transistor.
Advance Technical Information High Voltage, High Gain BiMOSFETTM Monolithic Bipolar MOS Transistor IXBL64N250 VCES IC110 VCE(sat) = = ≤ 2500V 46A.
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