IXBL64N250 Datasheet - IXYS Corporation

IXBL64N250, Monolithic Bipolar MOS Transistor

Advance Technical Information High Voltage, High Gain BiMOSFETTM Monolithic Bipolar MOS Transistor IXBL64N250 VCES IC110 VCE(sat) = = ≤ 2500V 46A.

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IXBL64N250-IXYSCorporation.pdf

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Datasheet Details

Part number:

IXBL64N250

Manufacturer:

IXYS Corporation

File Size:

180.16 KB

Description:

Monolithic Bipolar MOS Transistor

Features

* z Silicon Chip on Direct-Copper Bond (DCB) Substrate z Isolated Mounting Surface z 2500V∼ Electrical Isolation z High Blocking Voltage z Low Switching Losses z High Current Handling Capability z Anti-Parallel Diode Advantages z High Power Density z Low Gate Drive Requirement Symbol Test Conditions

Applications

* z Switch-Mode and Resonant-Mode Power Supplies z Uninterrupted Power Supplies (UPS) z Capacitor Discharge Circuits z Laser Generators © 2010 IXYS CORPORATION, All Rights Reserved DS100259(04/10) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfS IC = 64A, VCE = 10V, Note 1 Charact

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IXBL64N250 Monolithic Bipolar MOS Transistor IXYS Corporation

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