IXBL60N360 Bipolar MOS Transistor

IXYS

Description

Advance Technical Information High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBL60N360 VCES = IC110 = VCE(sat)  3600.

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Datasheet Specifications

Part number: IXBL60N360
Manufacturer: IXYS
File Size: 172.27 KB
Datasheet: IXBL60N360-IXYS.pdf
Description: Bipolar MOS Transistor

Features

* Silicon Chip on Direct-Copper Bond (DCB) Substrate
* Isolated Mounting Surface
* 4000V~ Electrical Isolation
* High Blocking Voltage
* High Frequency Operation Advantages
* Low Gate Drive Requirement

Applications

* Switch-Mode and Resonant-Mode Power Supplies
* Uninterruptible Power Supplies (UPS)
* Laser Generators
* Capacitor Discharge Circuits
* AC Switches © 2013 IXYS CORPORATION, All Rights Reserved DS100577(11/13) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gf

IXBL60N360 Distributors

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IXBL60N360 Bipolar MOS Transistor IXYS

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