IXBL60N360 Datasheet - IXYS

IXBL60N360 Bipolar MOS Transistor

Advance Technical Information High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBL60N360 VCES = IC110 = VCE(sat)  3600V 36A 3.4V (Electrically Isolated Tab) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M 3600 V 3600 V VGES VGEM Continuous Transient ± 20 V ± 30 V IC25 TC = 25°C IC110 TC = 110°C ICM TC = 25°C, 1ms 92 A 36 A 720 A SSOA VGE = 15V, TVJ = 125°C, RG = 4.7 ICM = 480 A (RBS.

IXBL60N360 Features

* Silicon Chip on Direct-Copper Bond (DCB) Substrate

* Isolated Mounting Surface

* 4000V~ Electrical Isolation

* High Blocking Voltage

* High Frequency Operation Advantages

* Low Gate Drive Requirement

* High Power Density Applications

* Switch-Mode and Resonant-Mode

IXBL60N360 Datasheet (172.27 KB)

IXBL60N360 Datasheet Preview — Preview of IXBL60N360 PDF

Datasheet Details

Part number:

IXBL60N360

Manufacturer:

IXYS

File Size:

172.27 KB

Description:

Bipolar mos transistor.

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IXBL60N360 Bipolar MOS Transistor IXYS

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