IXBL60N360 - Bipolar MOS Transistor
Advance Technical Information High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBL60N360 VCES = IC110 = VCE(sat) 3600V 36A 3.4V (Electrically Isolated Tab) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M 3600 V 3600 V VGES VGEM Continuous Transient ± 20 V ± 30 V IC25 TC = 25°C IC110 TC = 110°C ICM TC = 25°C, 1ms 92 A 36 A 720 A SSOA VGE = 15V, TVJ = 125°C, RG = 4.7 ICM = 480 A (RBS
IXBL60N360 Features
* Silicon Chip on Direct-Copper Bond (DCB) Substrate
* Isolated Mounting Surface
* 4000V~ Electrical Isolation
* High Blocking Voltage
* High Frequency Operation Advantages
* Low Gate Drive Requirement
* High Power Density Applications
* Switch-Mode and Resonant-Mode
