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IXBL60N360 Bipolar MOS Transistor

IXBL60N360 Description

Advance Technical Information High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBL60N360 VCES = IC110 = VCE(sat)  3600.

IXBL60N360 Features

* Silicon Chip on Direct-Copper Bond (DCB) Substrate
* Isolated Mounting Surface
* 4000V~ Electrical Isolation
* High Blocking Voltage
* High Frequency Operation Advantages
* Low Gate Drive Requirement

IXBL60N360 Applications

* Switch-Mode and Resonant-Mode Power Supplies
* Uninterruptible Power Supplies (UPS)
* Laser Generators
* Capacitor Discharge Circuits
* AC Switches © 2013 IXYS CORPORATION, All Rights Reserved DS100577(11/13) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gf

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Datasheet Details

Part number
IXBL60N360
Manufacturer
IXYS
File Size
172.27 KB
Datasheet
IXBL60N360-IXYS.pdf
Description
Bipolar MOS Transistor

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Bipolar MOS Transistor IXYS
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