IXFN39N90 Datasheet (IXYS Corporation)

IXFN39N90, Power MOSFET

HiPerFETTM Power MOSFETs Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL Md 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC= 25°C TC= 25°C, pulse width limited by TJM TC= 25°C TC= 25°C TC= 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C IXFN 39N90 VDSS ID25 RDS(on) = = = 900

IXFN39N90 Features

* International standard packages

* miniBLOC, with Aluminium nitride isolation www.DataSheet4U.net Mounting torque Terminal connection torque 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g

* Low RDS (on) HDMOSTM process

* Rugged polysilicon gate cell structure