IXFN39N90 Power MOSFET

IXYS Corporation

Description

HiPerFETTM Power MOSFETs Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR .

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Datasheet Specifications

Part number: IXFN39N90
Manufacturer: IXYS Corporation
File Size: 145.95 KB
Datasheet: IXFN39N90_IXYSCorporation.pdf
Description: Power MOSFET

Features

* International standard packages
* miniBLOC, with Aluminium nitride isolation www. DataSheet4U. net Mounting torque Terminal connection torque 1.5/13 Nm/lb. in. 1.5/13 Nm/lb. in. 30 g
* Low RDS (on) HDMOSTM process
* Rugged polysilicon gate cell structure

Applications

* DC-DC converters Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 900 3.68 2.5 -0.009 ± 200 TJ = 25°C TJ = 125°C 100 2 0.22 5.0 V V/K V V/K nA µA mA Ω VDSS BVDSS VGH(th) VGH(th) IGSS IDSS RDS(on) V GS = 0 V, ID = 3 mA Temperature depe

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IXFN39N90 Power MOSFET IXYS Corporation

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