IXTT52N30P Datasheet - IXYS Corporation

IXTT52N30P Power MOSFET

PolarTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated IXTT52N30P IXTQ52N30P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-3P) TO-286 TO-3P Maximum Ratings .

IXTT52N30P Features

* Fast Intrinsic Rectifier

* Avalanche Rated

* Low RDS(ON) and QG

* Low Package Inductance Advantages

* High Power Density

* Easy to Mount

* Space Savings Applications

* Switch-Mode and Resonant-Mode Power Supplies

* DC-DC Converters

* Laser Drivers

* AC a

IXTT52N30P Datasheet (140.45 KB)

IXTT52N30P Datasheet Preview — Preview of IXTT52N30P PDF

Datasheet Details

Part number:

IXTT52N30P

Manufacturer:

IXYS Corporation

File Size:

140.45 KB

Description:

Power mosfet.

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