IXTQ52N30P_IXYSCorporation.pdf
Datasheet Details
Part number:
IXTT52N30P, IXTQ52N30P
Manufacturer:
IXYS Corporation
File Size:
140.45 KB
Description:
Power mosfet.
Note:
This datasheet PDF includes multiple part numbers: IXTT52N30P, IXTQ52N30P.
Please refer to the document for exact specifications by model.
IXTT52N30P, IXTQ52N30P, Power MOSFET
PolarTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated IXTT52N30P IXTQ52N30P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 150°C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-3P) TO-286 TO-3P Maximum Ratings
IXTT52N30P Features
* Fast Intrinsic Rectifier
* Avalanche Rated
* Low RDS(ON) and QG
* Low Package Inductance Advantages
* High Power Density
* Easy to Mount
* Space Savings Applications
* Switch-Mode and Resonant-Mode Power Supplies
* DC-DC Converters
* Laser Drivers
* AC a
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