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IXTT52N30P, IXTQ52N30P - Power MOSFET

IXTT52N30P Description

PolarTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated IXTT52N30P IXTQ52N30P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Ts.

IXTT52N30P Features

* Fast Intrinsic Rectifier
* Avalanche Rated
* Low RDS(ON) and QG
* Low Package Inductance Advantages
* High Power Density
* Easy to Mount

IXTT52N30P Applications

* Switch-Mode and Resonant-Mode Power Supplies
* DC-DC Converters
* Laser Drivers
* AC and DC Motor Drives
* Robotics and Servo Controls © 2013 IXYS CORPORATION, All Rights Reserved DS99115F(9/13) Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) gfs VDS = 10V,

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: IXTT52N30P, IXTQ52N30P. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
IXTT52N30P, IXTQ52N30P
Manufacturer
IXYS Corporation
File Size
140.45 KB
Datasheet
IXTQ52N30P_IXYSCorporation.pdf
Description
Power MOSFET
Note
This datasheet PDF includes multiple part numbers: IXTT52N30P, IXTQ52N30P.
Please refer to the document for exact specifications by model.

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