IXTT50N30, IXTH50N30 Datasheet - IXYS

Datasheet Details

Part number:

IXTT50N30, IXTH50N30

Manufacturer:

IXYS

File Size:

576.99 KB

Description:

Power MOSFET

Note:

This datasheet PDF includes multiple part numbers: IXTT50N30, IXTH50N30.
Please refer to the document for exact specifications by model.

Features

* z International standard packages z Low RDS (on) HDMOSTM process z Rugged polysilicon gate cell structure z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect Advantages z Easy to mount z Space savings z High power density © 2003 IXYS All rights reserv

IXTH50N30-IXYS.pdf

IXTT50N30 Datasheet Preview — This datasheet PDF includes multiple part numbers: IXTT50N30, IXTH50N30. Please refer to the document for exact specifications by model.

IXTT50N30, IXTH50N30, Power MOSFET

Advance Technical Information High Current Power MOSFET N-Channel Enhancement Mode IXTH 50N30 IXTT 50N30 VDSS ID25 RDS(on) = 300 V = 50 A = 65 mΩ Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C 1.6 mm (0.062 in.) from case fo

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