IXTT50N30, IXTH50N30 Power MOSFET

IXYS

Description

Advance Technical Information High Current Power MOSFET N-Channel Enhancement Mode IXTH 50N30 IXTT 50N30 VDSS ID25 RDS(on) = 300 V = 50 A = 65 mΩ .

📥 Download Datasheet

IXTT50N30 Datasheet Preview — This datasheet PDF includes multiple part numbers: IXTT50N30, IXTH50N30. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: IXTT50N30, IXTH50N30
Manufacturer: IXYS
File Size: 576.99 KB
Datasheet: IXTH50N30-IXYS.pdf
Description: Power MOSFET
Note: This datasheet PDF includes multiple part numbers: IXTT50N30, IXTH50N30.
Please refer to the document for exact specifications by model.

Features

* z International standard packages z Low RDS (on) HDMOSTM process z Rugged polysilicon gate cell structure z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect Advantages z Easy to mount z Space savings z High power density © 2003 IXYS All rights reserv

IXTT50N30 Distributors

📁 Related Datasheet

IXTT52N30P IXTT100N25P IXTT10P50 IXTT110N10P IXTT11P50 IXTT140N10P

📌 All Tags

IXTH50N30 Power MOSFET IXYS

IXYS IXTT50N30-like datasheet