IXTT50P10 Datasheet - IXYS

IXTT50P10 Standard Power MOSFET

Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTH50P10 IXTT50P10 VDSS = ID25 = ≤ RDS(on) - 100V - 50A 55mΩ TO-247 (IXTH) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.6mm (0.062 in.) from case for 10s Plastic body for 10s Mounting torque (TO-247) TO-247 TO-268 Maximum Ratings.

IXTT50P10 Features

* z International standard packages JEDEC TO-247 AD z Low RDS(ON) HDMOSTM process z Rugged polysilicon gate cell structure z Unclamped Inductive Switching (UIS) rated z Low package inductance (< 5nH) - easy to drive and to protect Applications z High side switching z Push-pull amplifiers z DC Choppers

IXTT50P10_IXYS.pdf