* High Blocking Voltage
* International Standard Packages
* Low Conduction Losses
* High Current Handling Capability
* MOS Gate Turn-On - Drive Simplicity Advantages
* Easy to Mount
* Space Savings
* High Power Density Applications
* Uninterruptible Power Supplies
IXBK55N300 Datasheet (1.81 MB)
IXBK55N300
IXYS
1.81 MB
Monolithic bipolar mos transistor.
High Voltage, High Gain BiMOSFETTM
Monolithic Bipolar MOS Transistor
IXBK55N300 IXBX55N300
Symbol
VCES VCGR VGES V
GEM
IC25 I
C110
ICM SSOA (RBSOA)
.
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