IXBK55N300 Monolithic Bipolar MOS Transistor

IXYS

Description

High Voltage, High Gain BiMOSFETTM Monolithic Bipolar MOS Transistor IXBK55N300 IXBX55N300 Symbol VCES VCGR VGES V GEM IC25 I C110 ICM SSOA (RBSOA) .

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Datasheet Specifications

Part number: IXBK55N300
Manufacturer: IXYS
File Size: 1.81 MB
Datasheet: IXBK55N300-IXYS.pdf
Description: Monolithic Bipolar MOS Transistor

Features

* High Blocking Voltage
* International Standard Packages
* Low Conduction Losses
* High Current Handling Capability
* MOS Gate Turn-On - Drive Simplicity Advantages
* Easy to Mount
* Space Savings

Applications

* Uninterruptible Power Supplies (UPS)
* Switch-Mode and Resonant-Mode Power Supplies
* Capacitor Discharge Circuits
* Laser Generators © 2021 Littelfuse, Inc. DS100158B(7/21) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gf

IXBK55N300 Distributors

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IXBK55N300 Monolithic Bipolar MOS Transistor IXYS

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