IXBK64N250 Monolithic Bipolar MOS Transistor

IXYS

Description

High Voltage, High Gain BiMOSFETTM Monolithic Bipolar MOS Transistor IXBK64N250 IXBX64N250 VCES = I = C110  VCE(sat) 2500V 64A 3.0V TO-264 (I.

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Datasheet Specifications

Part number: IXBK64N250
Manufacturer: IXYS
File Size: 2.07 MB
Datasheet: IXBK64N250-IXYS.pdf
Description: Monolithic Bipolar MOS Transistor

Features

* High Blocking Voltage
* Low Switching Losses
* High Current Handling Capability
* Anti-Parallel Diode Advantages
* High Power Density

Applications

* Switch-Mode and Resonant-Mode Power Supplies
* Uninterrupted Power Supplies (UPS)
* Capacitor Discharge Circuits
* Laser Generators © 2021 Littelfuse, Inc. DS99832C(12/21) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfS

IXBK64N250 Distributors

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IXBK64N250 Monolithic Bipolar MOS Transistor IXYS

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