IXBK64N250 - Monolithic Bipolar MOS Transistor
High Voltage, High Gain BiMOSFETTM Monolithic Bipolar MOS Transistor IXBK64N250 IXBX64N250 VCES = I = C110 VCE(sat) 2500V 64A 3.0V TO-264 (IXBK) Symbol VCES VCGR VGES V GEM I C25 I LRMS IC100 ICM SSOA (RBSOA) TSC (SCSOA) PC TJ TJM Tstg T L Md F C Weight Test Conditions Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient 2500 V 2500 V ±25 V ±35 V T C = 25C (Chip Capability) Lead Current Limit, RMS 156 A 120 A TC = 110°C TC = 25°C, 1
IXBK64N250 Features
* High Blocking Voltage
* Low Switching Losses
* High Current Handling Capability
* Anti-Parallel Diode Advantages
* High Power Density
* Low Gate Drive Requirement Applications
* Switch-Mode and Resonant-Mode Power Supplies
* Uninterrupted Power Supplies (UPS)
