* High Blocking Voltage
* Low Switching Losses
* High Current Handling Capability
* Anti-Parallel Diode Advantages
* High Power Density
* Low Gate Drive Requirement Applications
* Switch-Mode and Resonant-Mode Power Supplies
* Uninterrupted Power Supplies (UPS)
IXBK64N250 Datasheet (2.07 MB)
IXBK64N250
IXYS
2.07 MB
Monolithic bipolar mos transistor.
High Voltage, High Gain BiMOSFETTM Monolithic Bipolar MOS Transistor IXBK64N250 IXBX64N250 VCES = I = C110 VCE(sat) 2500V 64A 3.0V TO-264 (I.
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