* International Standard Packages
* High Blocking Voltage
* Fast Switching
* High Current Handling Capability
* Anti-Parallel Diode Advantages
* High Power Density
* Low Gate Drive Requirement
* Intergrated Diode Can Be Used for Protection Applications
* Switch-Mo
IXBK75N170A Datasheet (197.15 KB)
IXBK75N170A
IXYS
197.15 KB
Bipolar mos transistor.
BiMOSFETTM Monolithic IXBK75N170A Bipolar MOS Transistor IXBX75N170A
VCES =
I
=
C90
VCE(sat)
t = fi(typ)
1700V 65A 6.00V 60ns
Symbol
VCES VC.
📁 Related Datasheet
IXBK75N170 Bipolar MOS Transistor (IXYS)
IXBK55N300 Monolithic Bipolar MOS Transistor (IXYS)
IXBK64N250 Monolithic Bipolar MOS Transistor (IXYS)
IXBA12N300HV Bipolar MOS Transistor (IXYS)
IXBA14N300HV Bipolar MOS Transistor (IXYS)
IXBA16N170AHV Bipolar MOS Transistor (IXYS)
IXBD4410 Half Bridge Driver Chipset (IXYS Corporation)
IXBD4411 Half Bridge Driver Chipset (IXYS Corporation)
IXBF12N300 Monolithic Bipolar MOS Transistor (IXYS)
IXBF14N300 Bipolar MOS Transistor (IXYS)
