IXBK75N170A Bipolar MOS Transistor

IXYS

Description

BiMOSFETTM Monolithic IXBK75N170A Bipolar MOS Transistor IXBX75N170A VCES = I = C90  VCE(sat) t = fi(typ) 1700V 65A 6.00V 60ns Symbol VCES VC.

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Datasheet Specifications

Part number: IXBK75N170A
Manufacturer: IXYS
File Size: 197.15 KB
Datasheet: IXBK75N170A-IXYS.pdf
Description: Bipolar MOS Transistor

Features

* International Standard Packages
* High Blocking Voltage
* Fast Switching
* High Current Handling Capability
* Anti-Parallel Diode Advantages
* High Power Density
* Low Gate Drive Requirement

Applications

* Switch-Mode and Resonant-Mode Power Supplies
* UPS
* AC Motor Drives
* Substitutes for High Voltage MOSFET © 2016 IXYS CORPORATION, All Rights Reserved DS100166A(8/16) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfS IC = 42A, VCE = 10V, Note 1 Cies Coes Cres

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IXBK75N170A Bipolar MOS Transistor IXYS

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