IXBK75N170 Datasheet - IXYS

IXBK75N170, Bipolar MOS Transistor

Preliminary Technical Information BiMOSFETTM Monolithic Bipolar MOS Transistor IXBK75N170 IXBX75N170 VCES = I = C110 ≤ VCE(sat) 1700V 75A 3.1V.

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Datasheet Details

Part number:

IXBK75N170

Manufacturer:

IXYS

File Size:

235.40 KB

Description:

Bipolar MOS Transistor

Applications

* z Capacitor Discharge z AC Switches z Switch-Mode and Resonant-Mode Power Supplies z UPS z AC Motor Drives © 2009 IXYS CORPORATION, All Rights Reserved DS100167A(10/09) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfS IC = IC110, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VG

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IXBK75N170 Bipolar MOS Transistor IXYS

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