Preliminary Technical Information BiMOSFETTM Monolithic Bipolar MOS Transistor IXBK75N170 IXBX75N170 VCES = I = C110 ≤ VCE(sat) 1700V 75A 3.1V Symbol VCES VCGR VGES VGEM IC25 ILRMS IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient 1700 V 1700 V ±20 V ±30 V TC = 25°C (Chip Capabilitty) TC = 25°C (Lead RMS Limit) TC = 110°C TC = 25°C, 1ms 200 A 160 A 75 A 580
Datasheet Details
Part number:
IXBK75N170
Manufacturer:
IXYS
File Size:
235.40 KB
Description:
Bipolar mos transistor.