IXFR64N50P Datasheet - IXYS

IXFR64N50P Power MOSFET

Advance Technical Information PolarHV HiPerFET Power MOSFET TM IXFR 64N50P ISOPLUS247TM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode RDS(on) trr VDSS ID25 = 500 V = 43 A ≤ 100 mΩ ≤ 200 ns www.DataSheet4U.com (Electrically Isolated Back Surface) Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Fd Weight 1.6 mm (0.063 in.) from case for 10 s 50/60 Hz, RMS, 1 minute Mounting force Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 .

IXFR64N50P Features

* z z International standard isolated package UL recognized package Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intr

IXFR64N50P_IXYS.pdf