IXFR64N60P Datasheet - IXYS

IXFR64N60P PolarHV HiPerFET Power MOSFET

Advance Technical Information PolarHV HiPerFET Power MOSFET TM IXFR 64N60P VDSS ID25 (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL FC Weight 50/60 Hz, RMS, 1 minute Mounting force ISOPLUS247 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, .

IXFR64N60P Features

* z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z International standard packages z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect Advantages z z Symbol Test Condition

IXFR64N60P_IXYS.pdf