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IXFR64N60P Datasheet - IXYS

IXFR64N60P, PolarHV HiPerFET Power MOSFET

Advance Technical Information PolarHV HiPerFET Power MOSFET TM IXFR 64N60P VDSS ID25 (Electrically Isolated Back Surface) N-Channel Enhancement Mo.
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IXFR64N60P_IXYS.pdf

Preview of IXFR64N60P PDF

Datasheet Details

Part number:

IXFR64N60P

Manufacturer:

IXYS

File Size:

146.91 KB

Description:

PolarHV HiPerFET Power MOSFET

Features

* z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z International standard packages z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect Advantages z z Symbol Test Condition

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