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IXFR66N50Q2 Datasheet - IXYS

IXFR66N50Q2 - Power MOSFET

HiPerFETTM Power MOSFETs Q-Class IXFR 66N50Q2 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Low intrinsic Rg, low trr Preliminary Data Sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL FC Weight 1.6 mm (0.063 in) from case for 10 s Mounting force Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ

IXFR66N50Q2 Features

* z z z z z Double metal process for low gate resistance International standard packages Epoxy meet UL 94 V-0, flammability classification Avalanche energy and current rated Fast intrinsic Rectifier Advantages z z z Easy to mount Space savings High power density Symbol Test Conditions Characte

IXFR66N50Q2_IXYS.pdf

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Datasheet Details

Part number:

IXFR66N50Q2

Manufacturer:

IXYS

File Size:

151.04 KB

Description:

Power mosfet.

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