IXFR70N15 - Power MOSFET
Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 70N15 ISOPLUS247TM (Electrically Isolated Backside) N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS = 150 V ID25 = 67 A RDS(on)= 28 mW trr £ 250ns Symbol VDSS VDGR VGS VGSM ID25 I D(RMS) IDM I AR EAR E AS dv/dt P D TJ TJM Tstg TL VISOL Weight Symbol VDSS VGS(th) IGSS IDSS R DS(on) Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C (MOSFET chip capability) External
IXFR70N15 Features
* Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation
* Low drain to tab capacitance(
