IXFR70N15 Datasheet - IXYS

IXFR70N15 Power MOSFET

Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 70N15 ISOPLUS247TM (Electrically Isolated Backside) N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS = 150 V ID25 = 67 A RDS(on)= 28 mW trr £ 250ns Symbol VDSS VDGR VGS VGSM ID25 I D(RMS) IDM I AR EAR E AS dv/dt P D TJ TJM Tstg TL VISOL Weight Symbol VDSS VGS(th) IGSS IDSS R DS(on) Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C (MOSFET chip capability) External.

IXFR70N15 Features

* Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation

* Low drain to tab capacitance(

IXFR70N15-IXYS.pdf

IXFR70N15 Datasheet Preview — Preview of IXFR70N15 PDF

Datasheet Details

Part number:

IXFR70N15

Manufacturer:

IXYS

File Size:

34.73 KB

Description:

Power mosfet.

📁 Related Datasheet

IXFR100N25 HiPerFET Power MOSFETs (IXYS Corporation)

IXFR102N30P Polar HiPerFET Power MOSFET (IXYS)

IXFR10N100F HiPerFET Power MOSFETs (IXYS Corporation)

IXFR10N100Q N-Channel Power MOSFET (IXYS Corporation)

IXFR120N20 Power MOSFET (IXYS Corporation)

IXFR120N25P PolarHT HiPerFET Power MOSFET (IXYS)

IXFR12N100F HiPerFET Power MOSFETs (IXYS Corporation)

IXFR12N100Q N-Channel Power MOSFET (IXYS Corporation)

TAGS

IXFR70N15 IXFR70N15 Power MOSFET IXYS

IXFR70N15 Distributor