* z Silicon Chip on Direct-Copper Bond (DCB) Substrate z Isolated Mounting Surface z 2500V~ Electrical Isolation z Avalanche Rated z Fast Intrinsic Rectifier z Low RDS(ON) and QG Advantages z Easy to Mount z Space Savings z High Power Density Applications z DC-DC Converters z Battery Chargers z Switch
IXFR90N30 Datasheet (164.19 KB)
IXFR90N30
IXYS
164.19 KB
N-channel power mosfet.
HiPerFETTM Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFR90N30 VDSS = ID25 = ≤ .
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