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IXFR32N50Q, IXFR30N50Q Power MOSFET

IXFR32N50Q Description

HiPerFETTM Power MOSFETs ISOPLUS247TM (Electrically Isolated Back Surface) N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family Preliminary .

IXFR32N50Q Features

* Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation
* Low drain to tab capacitance(

IXFR32N50Q Applications

* Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 2 4 ±100 TJ = 25°C TJ = 125°C 30N50 32N50 100 1 0.16 0.15 V V nA mA mA W W Advantages
* Easy assembly
* Space savings
* High power density 98608B (7/00) VDSS VGS(th) IGSS

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: IXFR32N50Q, IXFR30N50Q. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
IXFR32N50Q, IXFR30N50Q
Manufacturer
IXYS Corporation
File Size
92.66 KB
Datasheet
IXFR30N50Q_IXYSCorporation.pdf
Description
Power MOSFET
Note
This datasheet PDF includes multiple part numbers: IXFR32N50Q, IXFR30N50Q.
Please refer to the document for exact specifications by model.

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