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IXTP05N100, IXTA05N100 - Power MOSFET

IXTP05N100 Description

High Voltage Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA05N100HV IXTA05N100 IXTP05N100 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS d.

IXTP05N100 Features

* High Voltage Package (TO-263HV)
* Fast Switching Times
* Avalanche Rated
* Rds(on) HDMOSTM Process
* Rugged Polysilicon Gate Cell structure
* Extended FBSOA Advantages
* High Power Density

IXTP05N100 Applications

* Switch-Mode and Resonant-Mode Power Supplies
* Flyback Inverters
* DC Choppers © 2014 IXYS CORPORATION, All rights reserved DS98736F(5/14) Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 20V, ID = 500mA, Note 1 Ciss Coss Crss VGS = 0V, VDS = 25V, f = 1

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: IXTP05N100, IXTA05N100. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
IXTP05N100, IXTA05N100
Manufacturer
IXYS Corporation
File Size
190.35 KB
Datasheet
IXTA05N100_IXYSCorporation.pdf
Description
Power MOSFET
Note
This datasheet PDF includes multiple part numbers: IXTP05N100, IXTA05N100.
Please refer to the document for exact specifications by model.

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