2SA1358 Silicon PNP Power Transistor

Inchange Semiconductor

Description

isc Silicon PNP Power Transistor .
High Collector-Emitter Breakdown Voltage : V(BR)CEO= -120V(Min). Complement to Type 2SC3421. Minimum Lot-to-Lot variations for robust dev.

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Datasheet Specifications

Part number: 2SA1358
Manufacturer: Inchange Semiconductor
File Size: 196.62 KB
Datasheet: 2SA1358-InchangeSemiconductor.pdf
Description: Silicon PNP Power Transistor

Applications

* Designed for audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1 A IB Base Cur

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2SA1358 Silicon PNP Power Transistor Inchange Semiconductor

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