2SC3679 Silicon NPN Power Transistors

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor 2SC3679 .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min). High Switching Speed. High Reliability. Minimum Lot-to-Lot variation.

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Datasheet Specifications

Part number: 2SC3679
Manufacturer: Inchange Semiconductor
File Size: 199.04 KB
Datasheet: 2SC3679_InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistors

Applications

* Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base voltage 7 V IC Collector Current-Continuous 5 A ICM Col

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2SC3679 Silicon NPN Power Transistors Inchange Semiconductor

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