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2SD1117 - Silicon NPN Power Transistor

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Datasheet Details

Part number 2SD1117
Manufacturer Inchange Semiconductor
File Size 208.53 KB
Description Silicon NPN Power Transistor
Datasheet download datasheet 2SD1117_InchangeSemiconductor.pdf

2SD1117 Product details

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min) Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.2V(Max) @IC= 5A Wide Area of Safe Operation Complement to Type 2SB850 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio amplifier, series regulators and general purpose power amplifiers.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 40 V

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