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2SD1912 - Silicon NPN Power Transistor

2SD1912 Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min). Wide Area of Safe Operation. Low Collector Saturation Voltage. Minimum Lot.

2SD1912 Applications

* Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 3 A ICM Collector Curre

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Datasheet Details

Part number
2SD1912
Manufacturer
Inchange Semiconductor
File Size
217.05 KB
Datasheet
2SD1912_InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistor

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Silicon NPN Power Transistor Inchange Semiconductor
Inchange Semiconductor 2SD1912-like datasheet