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2SD1918 - Silicon NPN Power Transistor

2SD1918 Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1918 .
High fT：fT=80MHz(TYP). High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min). Excellent linearity of hFE. 100% avalanche te.

2SD1918 Applications

* Motor drivers,LED driver,Power supply ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1.5 A ICM Collector Current-Peak Collec

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Datasheet Details

Part number
2SD1918
Manufacturer
Inchange Semiconductor
File Size
189.98 KB
Datasheet
2SD1918-InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistor

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Silicon NPN Power Transistor Inchange Semiconductor
Inchange Semiconductor 2SD1918-like datasheet