Datasheet4U Logo Datasheet4U.com

3DD15 - Silicon NPN Power Transistor

3DD15 Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min. DC Current Gain- : hFE= 30~250(Min. Collector-Emitter Saturation Vol.

3DD15 Applications

* Designed for B&W TV horizontal output , regulated power supply and power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Curren

📥 Download Datasheet

Preview of 3DD15 PDF
datasheet Preview Page 2

Datasheet Details

Part number
3DD15
Manufacturer
Inchange Semiconductor
File Size
204.43 KB
Datasheet
3DD15-InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistor

📁 Related Datasheet

  • 3DD1545 - NPN Transistor (Huajing Microelectronics)
  • 3DD1555 - CASE-RATED BIPOLAR TRANSISTOR (JILIN SINO)
  • 3DD1555A - CASE-RATED BIPOLAR TRANSISTOR (JILIN SINO)
  • 3DD1555P - CASE-RATED BIPOLAR TRANSISTOR (JILIN SINO)
  • 3DD157 - Low-frequency silicon NPN power transistor (ETC)
  • 3DD159A - NPN Transistor (INCHANGE)
  • 3DD159B - NPN Transistor (INCHANGE)
  • 3DD159C - NPN Transistor (INCHANGE)

📌 All Tags

Silicon NPN Power Transistor Inchange Semiconductor
Inchange Semiconductor 3DD15-like datasheet

3DD15 Stock/Price