IRGB6B60K Datasheet - International Rectifier

IRGB6B60K, INSULATED GATE BIPOLAR TRANSISTOR

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IRGB6B60K_InternationalRectifier.pdf

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Datasheet Details

Part number:

IRGB6B60K

Manufacturer:

International Rectifier

File Size:

285.73 KB

Description:

INSULATED GATE BIPOLAR TRANSISTOR

Features

* Low VCE (on) Non Punch Through IGBT Technology.
* 10µs Short Circuit Capability.
* Square RBSOA.
* Positive VCE (on) Temperature Coefficient. C IRGB6B60K IRGS6B60K IRGSL6B60K VCES = 600V IC = 7.0A, TC=100°C G E tsc > 10µs, TJ=150°C Benefits
* Benchmark E

IRGB6B60K Distributors

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IRGB6B60K INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

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