Datasheet4U Logo Datasheet4U.com

IRGB6B60K

INSULATED GATE BIPOLAR TRANSISTOR

IRGB6B60K Features

* Low VCE (on) Non Punch Through IGBT Technology.

* 10µs Short Circuit Capability.

* Square RBSOA.

* Positive VCE (on) Temperature Coefficient. C IRGB6B60K IRGS6B60K IRGSL6B60K VCES = 600V IC = 7.0A, TC=100°C G E tsc > 10µs, TJ=150°C Benefits

* Benchmark E

IRGB6B60K Datasheet (285.73 KB)

Preview of IRGB6B60K PDF

Datasheet Details

Part number:

IRGB6B60K

Manufacturer:

International Rectifier

File Size:

285.73 KB

Description:

Insulated gate bipolar transistor.

📁 Related Datasheet

IRGB6B60KD INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRGB6B60KDPBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRGB6B60KPbF Insulated Gate Bipolar Transistor (International Rectifier)

IRGB10B60KD INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRGB10B60KDPBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRGB14C40L INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRGB14C40LPBF IGBT (International Rectifier)

IRGB15B60KD INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRGB15B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRGB20B60PD1 SMPS IGBT (International Rectifier)

TAGS

IRGB6B60K INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

Image Gallery

IRGB6B60K Datasheet Preview Page 2 IRGB6B60K Datasheet Preview Page 3

IRGB6B60K Distributor