IRGB6B60K - INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

Datasheet Details

Part number	IRGB6B60K
Manufacturer	International Rectifier ↗
File Size	285.73 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGB6B60K_InternationalRectifier.pdf

Low VCE (on) Non Punch Through IGBT Technology.
10µs Short Circuit Capability.
Square RBSOA.
Positive VCE (on) Temperature Coefficient. C IRGB6B60K IRGS6B60K IRGSL6B60K VCES = 600V IC = 7.0A, TC=100°C G E tsc > 10µs, TJ=150°C Benefits.
Benchmark Efficiency for Motor Control.
Rugged Transient Performance.
Low EMI.
Excellent Current Sharing in Parallel Operation. n-channel VCE(on) typ. = 1.8V TO-220AB IRGB6B60K.

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Published: Aug 17, 2007 |