IRGB6B60KDPBF Datasheet - International Rectifier

IRGB6B60KDPBF, INSULATED GATE BIPOLAR TRANSISTOR

www.DataSheet4U.com PD - 95229 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C IRGB6B60KDPbF IRGS6B60KD IRGSL6B60KD VCES = 6.

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IRGB6B60KDPBF_InternationalRectifier.pdf

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Datasheet Details

Part number:

IRGB6B60KDPBF

Manufacturer:

International Rectifier

File Size:

349.15 KB

Description:

INSULATED GATE BIPOLAR TRANSISTOR

Features

* Low VCE (on) Non Punch Through IGBT Technology.
* Low Diode VF.
* 10µs Short Circuit Capability.
* Square RBSOA.
* Ultrasoft Diode Reverse Recovery Characteristics.
* Positive VCE (on) Temperature Coefficient.
* TO-220 is available in PbF as

IRGB6B60KDPBF Distributors

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IRGB6B60KDPBF INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

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