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IRGB6B60KDPBF

INSULATED GATE BIPOLAR TRANSISTOR

IRGB6B60KDPBF Features

* Low VCE (on) Non Punch Through IGBT Technology.

* Low Diode VF.

* 10µs Short Circuit Capability.

* Square RBSOA.

* Ultrasoft Diode Reverse Recovery Characteristics.

* Positive VCE (on) Temperature Coefficient.

* TO-220 is available in PbF as

IRGB6B60KDPBF Datasheet (349.15 KB)

Preview of IRGB6B60KDPBF PDF

Datasheet Details

Part number:

IRGB6B60KDPBF

Manufacturer:

International Rectifier

File Size:

349.15 KB

Description:

Insulated gate bipolar transistor.
www.DataSheet4U.com PD - 95229 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C IRGB6B60KDPbF IRGS6B60KD IRGSL6B60KD VCES = 6.

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IRGB6B60KDPBF INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

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