IRGB6B60KDPBF Datasheet, Transistor, International Rectifier

IRGB6B60KDPBF Features

• Transistor
• Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Reco

PDF File Details

Part number:

IRGB6B60KDPBF

Manufacturer:

International Rectifier

File Size:

349.15kb

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📄 Datasheet

Description:

Insulated gate bipolar transistor.

IRGB6B60KDPBF Application

• Applications Ci= τi /Ri Ci= i/Ri Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 1E-3 1E-2 1E-1 1E+0 0.001 1E-6 1E-5 1E-4 t1 , Rec

TAGS

IRGB6B60KDPBF

International Rectifier

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