IRGB6B60KD - INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

Datasheet Details

Part number	IRGB6B60KD
Manufacturer	International Rectifier ↗
File Size	349.29 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGB6B60KD_InternationalRectifier.pdf

Low VCE (on) Non Punch Through IGBT Technology.
Low Diode VF.
10µs Short Circuit Capability.
Square RBSOA.
Ultrasoft Diode Reverse Recovery Characteristics.
Positive VCE (on) Temperature Coefficient. G E tsc > 10µs, TJ=150°C Benefits.
Benchmark Efficiency for Motor Control.
Rugged Transient Performance.
Low EMI.
Excellent Current Sharing in Parallel Operation. n-channel VCE(on) typ. = 1.8V TO.

📁 IRGB6B60KD Similar Datasheet

Other Datasheets by International Rectifier

Published: Aug 17, 2007 |