* Low VCE (on) Non Punch Through IGBT Technology.
* Low Diode VF.
* 10µs Short Circuit Capability.
* Square RBSOA.
* Ultrasoft Diode Reverse Recovery Characteristics.
* Positive VCE (on) Temperature Coefficient. G E tsc > 10µs, TJ=150°C Benefits
IRGB6B60KD Datasheet (349.29 KB)
IRGB6B60KD
International Rectifier
349.29 KB
Insulated gate bipolar transistor.
www.DataSheet4U.com PD - 94381E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C IRGB6B60KD IRGS6B60KD IRGSL6B60KD VCES = 600.
📁 Related Datasheet
IRGB6B60K INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRGB6B60KDPBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRGB6B60KPbF Insulated Gate Bipolar Transistor (International Rectifier)
IRGB10B60KD INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRGB10B60KDPBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRGB14C40L INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRGB14C40LPBF IGBT (International Rectifier)
IRGB15B60KD INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRGB15B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRGB20B60PD1 SMPS IGBT (International Rectifier)
