IRGB6B60KD Datasheet - International Rectifier

IRGB6B60KD INSULATED GATE BIPOLAR TRANSISTOR

IRGB6B60KD Features

* Low VCE (on) Non Punch Through IGBT Technology.

* Low Diode VF.

* 10µs Short Circuit Capability.

* Square RBSOA.

* Ultrasoft Diode Reverse Recovery Characteristics.

* Positive VCE (on) Temperature Coefficient. G E tsc > 10µs, TJ=150°C Benefits

Datasheet Details

IRGB6B60KD

International Rectifier

349.29 KB

Insulated gate bipolar transistor.

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