IRGB6B60KPbF Datasheet - International Rectifier

Insulated Gate Bipolar Transistor

* Low VCE (on) Non Punch Through IGBT Technology.

* 10µs Short Circuit Capability.

* Square RBSOA.

* Positive VCE (on) Temperature Coefficient.

* Lead-Free. Benefits

* Benchmark Efficiency for Motor Control.

* Rugged Transient Performance.

IRGB6B60KPbF

International Rectifier

288.26 KB

Insulated gate bipolar transistor.

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