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IRF6716MTRPBF N-Channel HEXFET Power MOSFET

IRF6716MTRPBF Description

IRF6716MPbF IRF6716MTRPbF l l l l l l l l l l PD - 97274 RoHs Compliant Containing No Lead and Bromide  VDSS VGS RDS(on) RDS(on) Low Profile (<0.6 .
The IRF6716MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state res.

IRF6716MTRPBF Features

* Voltage (V) 1 T A = 25°C T J = 150°C 0.1 0.01 Single Pulse 0.10 1.00 10.00 100.00 VDS, Drain-to-Source Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 40 35 30 25 20 15 10 5 0 25 50 75 100 125 150 T C , Case Temperature (°C) Fig 11. Maximum Safe Operating Area 3.0 Typical VGS(

IRF6716MTRPBF Applications

* PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best t

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