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IRGB30B60KPBF INSULATED GATE BIPOLAR TRANSISTOR

IRGB30B60KPBF Description

PD - 95356 INSULATED GATE BIPOLAR TRANSISTOR C IRGB30B60KPbF IRGS30B60K IRGSL30B60K VCES = 600V IC = 50A, TC=100°C at TJ=175°C .

IRGB30B60KPBF Features

* Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C. TO-220 is available in PbF as Lead-Free G E tsc > 10µs, TJ

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