IRGIB10B60KD1 INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

IRGIB10B60KD1 Description

PD-94576A IRGIB10B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE .

IRGIB10B60KD1 Features

* Low VCE (on) Non Punch Through IGBT Technology.
* Low Diode VF.
* 10µs Short Circuit Capability.
* Square RBSOA.
* Ultrasoft Diode Reverse Recovery Characteristics.
* Positive VCE (on) Temperature Coefficient.
* Maximum Junction Temperature R

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IRGIB10B60KD1 Datasheet Preview — Preview of IRGIB10B60KD1 PDF

Datasheet Details

Part number: IRGIB10B60KD1
Manufacturer: International Rectifier
File Size: 412.53 KB
Datasheet: IRGIB10B60KD1_InternationalRectifier.pdf
Description: INSULATED GATE BIPOLAR TRANSISTOR

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INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

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