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IRGIB10B60KD1P INSULATED GATE BIPOLAR TRANSISTOR

IRGIB10B60KD1P Description

IRGIB10B60KD1P INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE .

IRGIB10B60KD1P Features

* Low VCE (on) Non Punch Through IGBT Technology.
* Low Diode VF.
* 10μs Short Circuit Capability.
* Square RBSOA.
* Ultrasoft Diode Reverse Recovery Characteristics.
* Positive VCE (on) Temperature Coefficient.
* Maximum Junction Temperature R

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INSULATED GATE BIPOLAR TRANSISTOR International Rectifier
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