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IRGS30B60KPBF Insulated Gate Bipolar Transistor

IRGS30B60KPBF Description

PD - 97003 INSULATED GATE BIPOLAR TRANSISTOR IRGB30B60KPbF IRGS30B60KPbF IRGSL30B60KPbF .

IRGS30B60KPBF Features

* Low VCE (on) Non Punch Through IGBT Technology
* 10µs Short Circuit Capability
* Square RBSOA
* Positive VCE (on) Temperature Coefficient
* Maximum Junction Temperature rated at 175°C
* Lead-Free C G E n-channel VCES = 600V IC = 50A, TC=100°C at TJ

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Insulated Gate Bipolar Transistor International Rectifier
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