Datasheet Details
- Part number
- HGT1S3N60A4DS
- Manufacturer
- Intersil Corporation
- File Size
- 130.32 KB
- Datasheet
- HGT1S3N60A4DS_IntersilCorporation.pdf
- Description
- 600V SMPS Series N-Channel IGBT
HGT1S3N60A4DS Description
HGT1S3N60A4DS, HGTP3N60A4D Data Sheet January 2000 File Number 4818 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGT1S3N60.
HGT1S3N60A4DS Features
* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49327. The diode used
📁 Related Datasheet
📌 All Tags