Part number:
HGT1S3N60A4DS
Manufacturer:
Intersil Corporation
File Size:
130.32 KB
Description:
600v/ smps series n-channel igbt with anti-parallel hyperfast diode.
HGT1S3N60A4DS_IntersilCorporation.pdf
Datasheet Details
HGT1S3N60A4DS Features
* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49327. The diode used
HGT1S3N60A4DS_IntersilCorporation.pdf
Datasheet Details
HGT1S3N60A4DS
Intersil Corporation
130.32 KB
600v/ smps series n-channel igbt with anti-parallel hyperfast diode.
HGT1S3N60A4DS Distributor
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