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HGT1S3N60A4DS 600V SMPS Series N-Channel IGBT

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Description

HGT1S3N60A4DS, HGTP3N60A4D Data Sheet January 2000 File Number 4818 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGT1S3N60.

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Datasheet Specifications

Part number
HGT1S3N60A4DS
Manufacturer
Intersil Corporation
File Size
130.32 KB
Datasheet
HGT1S3N60A4DS_IntersilCorporation.pdf
Description
600V SMPS Series N-Channel IGBT

Features

* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49327. The diode used

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