HGT1S3N60A4S Datasheet, Igbt, Intersil Corporation

HGT1S3N60A4S Features

  • Igbt of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage

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Part number:

HGT1S3N60A4S

Manufacturer:

Intersil Corporation

File Size:

156.22kb

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📄 Datasheet

Description:

600v/ smps series n-channel igbt.

Datasheet Preview: HGT1S3N60A4S 📥 Download PDF (156.22kb)
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HGT1S3N60A4S Application

  • Applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode

TAGS

HGT1S3N60A4S
600V
SMPS
Series
N-Channel
IGBT
Intersil Corporation

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