* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT is ideal for many high voltage switching application
HGT1S3N60A4S Datasheet (156.22 KB)
HGT1S3N60A4S
Intersil Corporation
156.22 KB
600v/ smps series n-channel igbt.
HGTD3N60A4S, HGT1S3N60A4S, HGTP3N60A4
Data Sheet January 2000 File Number 4825
600V, SMPS Series N-Channel IGBT
The HGTD3N60A4S, HGT1S3N60A4S and the.
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