* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49327. The diode used
HGT1S3N60A4DS Datasheet (113.52 KB)
HGT1S3N60A4DS
Fairchild Semiconductor
113.52 KB
600v/ smps series n-channel igbt with anti-parallel hyperfast diode.
HGT1S3N60A4DS, HGTP3N60A4D
Data Sheet December 2001
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGT1S3N60A4DS and the HGT.
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