HGT1S3N60A4DS Datasheet, Diode, Fairchild Semiconductor

HGT1S3N60A4DS Features

• Diode of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage

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HGT1S3N60A4DS

Manufacturer:

Fairchild Semiconductor

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113.52kb

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📄 Datasheet

Description:

600v/ smps series n-channel igbt with anti-parallel hyperfast diode.

HGT1S3N60A4DS Application

• Applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode

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