HGT1S3N60A4DS Datasheet - Fairchild Semiconductor

HGT1S3N60A4DS, 600V SMPS Series N-Channel IGBT

HGT1S3N60A4DS, HGTP3N60A4D Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGT1S3N60A4DS and the HGT.

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Datasheet Details

Part number:

HGT1S3N60A4DS

Manufacturer:

Fairchild Semiconductor

File Size:

113.52 KB

Description:

600V SMPS Series N-Channel IGBT

Features

* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49327. The diode used

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HGT1S3N60A4DS 600V SMPS Series N-Channel IGBT Fairchild Semiconductor

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