Datasheet Specifications
- Part number
- HGT1S3N60A4DS
- Manufacturer
- Fairchild Semiconductor
- File Size
- 113.52 KB
- Datasheet
- HGT1S3N60A4DS_FairchildSemiconductor.pdf
- Description
- 600V SMPS Series N-Channel IGBT
Description
HGT1S3N60A4DS, HGTP3N60A4D Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGT1S3N60A4DS and the HGT.
Features
* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49327. The diode usedHGT1S3N60A4DS Distributors
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