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HGT1S3N60B3S

7A/ 600V/ UFS Series N-Channel IGBTs

HGT1S3N60B3S Features

* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications

HGT1S3N60B3S Datasheet (141.53 KB)

Preview of HGT1S3N60B3S PDF

Datasheet Details

Part number:

HGT1S3N60B3S

Manufacturer:

Intersil Corporation

File Size:

141.53 KB

Description:

7a/ 600v/ ufs series n-channel igbts.
HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3 Data Sheet January 2000 File Number 4368.1 7A, 600V, UFS Series N-Channel IGBTs The HGTD3N60B3S, HGT1S3N60B3S a.

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TAGS

HGT1S3N60B3S 600V UFS Series N-Channel IGBTs Intersil Corporation

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