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HGT1S3N60B3S Datasheet - Intersil Corporation

HGT1S3N60B3S - 7A 600V UFS Series N-Channel IGBTs

HGT1S3N60B3S Features

* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications

HGT1S3N60B3S_IntersilCorporation.pdf

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Datasheet Details

Part number:

HGT1S3N60B3S

Manufacturer:

Intersil Corporation

File Size:

141.53 KB

Description:

7a 600v ufs series n-channel igbts.

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