HGT1S3N60B3S - 7A 600V UFS Series N-Channel IGBTs
HGT1S3N60B3S Features
* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications
