HGT1S3N60C3DS Datasheet, Diodes, Fairchild Semiconductor

HGT1S3N60C3DS Features

• Diodes
• 6A, 600V at TC = 25oC
• 600V Switching SOA Capability
• Typical Fall Time . . . . . . . . . . . . . . 130ns at TJ = 150oC
• Short Circuit Rating
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HGT1S3N60C3DS

Manufacturer:

Fairchild Semiconductor

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📄 Datasheet

Description:

6a/ 600v/ ufs series n-channel igbt with anti-parallel hyperfast diodes. The HGTP3N60C3D, HGT1S3N60C3D, and HGT1S3N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs

HGT1S3N60C3DS Application

• Applications operating at moderate frequencies where low conduction losses are essential. PACKAGING AVAILABILITY PART NUMBER HGTP3N60C3D HGT1S3N60C3

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