HGT1S3N60B3DS Datasheet - Intersil Corporation

HGT1S3N60B3DS 7A/ 600V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

HGT1S3N60B3DS Features

* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower onstate voltage drop varies only moderately between 25oC and 150oC. The diode used in anti-parallel with the IGBT is the RHRD460. T

HGT1S3N60B3DS Datasheet (154.31 KB)

HGT1S3N60B3DS Datasheet Preview — Preview of HGT1S3N60B3DS PDF

Datasheet Details

Part number:

HGT1S3N60B3DS

Manufacturer:

Intersil Corporation

File Size:

154.31 KB

Description:

7a/ 600v/ ufs series n-channel igbt with anti-parallel hyperfast diode.

📁 Related Datasheet

HGT1S3N60B3S 7A/ 600V/ UFS Series N-Channel IGBTs (Intersil Corporation)

HGT1S3N60A4DS 600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode (Fairchild Semiconductor)

HGT1S3N60A4DS 600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode (Intersil Corporation)

HGT1S3N60A4S 600V/ SMPS Series N-Channel IGBT (Intersil Corporation)

HGT1S3N60C3D 6A/ 600V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes (Fairchild Semiconductor)

HGT1S3N60C3D UFS Series N-Channel IGBT (Harris Corporation)

HGT1S3N60C3DS 6A/ 600V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes (Fairchild Semiconductor)

HGT1S3N60C3DS 6A/ 600V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes (Intersil Corporation)

HGT1S3N60C3DS UFS Series N-Channel IGBT (Harris Corporation)

HGT1S10N120BNS 35A/ 1200V/ NPT Series N-Channel IGBT (Fairchild Semiconductor)

TAGS

HGT1S3N60B3DS 600V UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Intersil Corporation

Image Gallery

HGT1S3N60B3DS Distributor