Part number:
HGT1S3N60B3DS
Manufacturer:
Intersil Corporation
File Size:
154.31 KB
Description:
7a/ 600v/ ufs series n-channel igbt with anti-parallel hyperfast diode.
HGT1S3N60B3DS_IntersilCorporation.pdf
Datasheet Details
HGT1S3N60B3DS Features
* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower onstate voltage drop varies only moderately between 25oC and 150oC. The diode used in anti-parallel with the IGBT is the RHRD460. T
HGT1S3N60B3DS_IntersilCorporation.pdf
Datasheet Details
HGT1S3N60B3DS
Intersil Corporation
154.31 KB
7a/ 600v/ ufs series n-channel igbt with anti-parallel hyperfast diode.
HGT1S3N60B3DS Distributor
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