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HGT1S3N60B3DS Datasheet - Intersil Corporation

HGT1S3N60B3DS - 7A 600V UFS Series N-Channel IGBT

HGT1S3N60B3DS Features

* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower onstate voltage drop varies only moderately between 25oC and 150oC. The diode used in anti-parallel with the IGBT is the RHRD460. T

HGT1S3N60B3DS_IntersilCorporation.pdf

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Datasheet Details

Part number:

HGT1S3N60B3DS

Manufacturer:

Intersil Corporation

File Size:

154.31 KB

Description:

7a 600v ufs series n-channel igbt.

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