Datasheet Specifications
- Part number
- HGT1S3N60B3DS
- Manufacturer
- Intersil Corporation
- File Size
- 154.31 KB
- Datasheet
- HGT1S3N60B3DS_IntersilCorporation.pdf
- Description
- 7A 600V UFS Series N-Channel IGBT
Description
HGTP3N60B3D, HGT1S3N60B3DS Data Sheet January 2000 File Number 4414.1 7A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTP.
Features
* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower onstate voltage drop varies only moderately between 25oC and 150oC. The diode used in anti-parallel with the IGBT is the RHRD460. THGT1S3N60B3DS Distributors
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