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HGT1S3N60B3DS Datasheet - Intersil Corporation

HGT1S3N60B3DS, 7A 600V UFS Series N-Channel IGBT

HGTP3N60B3D, HGT1S3N60B3DS Data Sheet January 2000 File Number 4414.1 7A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTP.
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Datasheet Details

Part number:

HGT1S3N60B3DS

Manufacturer:

Intersil Corporation

File Size:

154.31 KB

Description:

7A 600V UFS Series N-Channel IGBT

Features

* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower onstate voltage drop varies only moderately between 25oC and 150oC. The diode used in anti-parallel with the IGBT is the RHRD460. T

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HGT1S3N60B3DS 600V UFS Series N-Channel IGBT Intersil Corporation
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