* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower onstate voltage drop varies only moderately between 25oC and 150oC. The diode used in anti-parallel with the IGBT is the RHRD460. T
HGT1S3N60B3DS Datasheet (154.31 KB)
HGT1S3N60B3DS
Intersil Corporation
154.31 KB
7a/ 600v/ ufs series n-channel igbt with anti-parallel hyperfast diode.
HGTP3N60B3D, HGT1S3N60B3DS
Data Sheet January 2000 File Number 4414.1
7A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGTP.
📁 Related Datasheet
HGT1S3N60B3S 7A/ 600V/ UFS Series N-Channel IGBTs (Intersil Corporation)
HGT1S3N60A4DS 600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode (Fairchild Semiconductor)
HGT1S3N60A4DS 600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode (Intersil Corporation)
HGT1S3N60A4S 600V/ SMPS Series N-Channel IGBT (Intersil Corporation)
HGT1S3N60C3D 6A/ 600V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes (Fairchild Semiconductor)
HGT1S3N60C3D UFS Series N-Channel IGBT (Harris Corporation)
HGT1S3N60C3DS 6A/ 600V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes (Fairchild Semiconductor)
HGT1S3N60C3DS 6A/ 600V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes (Intersil Corporation)
HGT1S3N60C3DS UFS Series N-Channel IGBT (Harris Corporation)
HGT1S10N120BNS 35A/ 1200V/ NPT Series N-Channel IGBT (Fairchild Semiconductor)
TAGS
Image Gallery
