HGT1S3N60B3DS Datasheet, Diode, Intersil Corporation

HGT1S3N60B3DS Features

• Diode of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower onstate voltage

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HGT1S3N60B3DS

Manufacturer:

Intersil Corporation

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154.31kb

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📄 Datasheet

Description:

7a/ 600v/ ufs series n-channel igbt with anti-parallel hyperfast diode.

HGT1S3N60B3DS Application

• Applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and driv

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