Datasheet Specifications
- Part number
- HGT1S3N60C3DS
- Manufacturer
- Intersil Corporation
- File Size
- 273.87 KB
- Datasheet
- HGT1S3N60C3DS_IntersilCorporation.pdf
- Description
- 6A 600V UFS Series N-Channel IGBT
Description
HGTP3N60C3D, HGT1S3N60C3DS Data Sheet January 2000 File Number 4140.2 6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGT.
Features
* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49113. The diode usedHGT1S3N60C3DS Distributors
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