* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49113. The diode used
HGT1S3N60C3DS Datasheet (273.87 KB)
HGT1S3N60C3DS
Intersil Corporation
273.87 KB
6a/ 600v/ ufs series n-channel igbt with anti-parallel hyperfast diodes.
HGTP3N60C3D, HGT1S3N60C3DS
Data Sheet January 2000 File Number 4140.2
6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
The HGT.
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