* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is developmental type TA49115. The diode used in
HGT1S7N60C3DS Datasheet (176.05 KB)
HGT1S7N60C3DS
Intersil Corporation
176.05 KB
14a/ 600v/ ufs series n-channel igbt with anti-parallel hyperfast diodes.
HGTP7N60C3D, HGT1S7N60C3DS
Data Sheet January 2000 File Number 4150.2
14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
The HG.
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