Part number:
HGT1S7N60C3DS
Manufacturer:
Intersil Corporation
File Size:
176.05 KB
Description:
14a/ 600v/ ufs series n-channel igbt with anti-parallel hyperfast diodes.
HGT1S7N60C3DS_IntersilCorporation.pdf
Datasheet Details
HGT1S7N60C3DS Features
* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is developmental type TA49115. The diode used in
HGT1S7N60C3DS_IntersilCorporation.pdf
Datasheet Details
HGT1S7N60C3DS
Intersil Corporation
176.05 KB
14a/ 600v/ ufs series n-channel igbt with anti-parallel hyperfast diodes.
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