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HGTD6N50E1S - 6A/ 400V and 500V N-Channel IGBTs

HGTD6N50E1S Description

HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, HGTD6N50E1S March 1997 6A, 400V and 500V N-Channel IGBTs Packages HGTD6N40E1, HGTD6N50E1 JEDEC TO-251AA EMITTER .
The HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, and HGTD6N50E1S are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high v.

HGTD6N50E1S Features

* 6A, 400V and 500V
* VCE(ON): 2.5V Max.
* TFALL: 1.0µs
* Low On-State Voltage
* Fast Switching Speeds

HGTD6N50E1S Applications

* Power Supplies
* Motor Drives

📥 Download Datasheet

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Datasheet Details

Part number
HGTD6N50E1S
Manufacturer
Intersil Corporation
File Size
32.55 KB
Datasheet
HGTD6N50E1S_IntersilCorporation.pdf
Description
6A/ 400V and 500V N-Channel IGBTs

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📌 All Tags

400V and 500V N-Channel IGBTs Intersil Corporation
Intersil Corporation HGTD6N50E1S-like datasheet