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CGHV96050F2 Datasheet - MACOM

CGHV96050F2 - GaN HEMT

The CGHV96050F2 is a gallium nitride (GaN) amplifier.

This GaN amplifier offers excellent power added efficiency in comparison to other technologies.

GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and

CGHV96050F2 Features

* 8.4 - 9.6 GHz Operation

* 80 W POUT typical

* 10 dB Power Gain

* 55% Typical PAE

* 50 Ohm Internally Matched

CGHV96050F2-MACOM.pdf

Preview of CGHV96050F2 PDF
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Datasheet Details

Part number:

CGHV96050F2

Manufacturer:

MACOM

File Size:

1.73 MB

Description:

Gan hemt.

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