CGHV96050F2 - GaN HEMT
The CGHV96050F2 is a gallium nitride (GaN) amplifier.
This GaN amplifier offers excellent power added efficiency in comparison to other technologies.
GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and
CGHV96050F2 Features
* 8.4 - 9.6 GHz Operation
* 80 W POUT typical
* 10 dB Power Gain
* 55% Typical PAE
* 50 Ohm Internally Matched
