* High power gain: Pout>8W, Gp>10dB@Vdd=7.2V,f=520MHz (4.5) 0.95+/-0.2 2.6+/-0.2
* High Efficiency: 50%min. (520MHz)
* Integrated gate protection diode INDEX MARK [Gate] TOP VIEW DETAIL A SIDE VIEW 1.8+/-0.1 BOTTOM VIEW Terminal No. (a)Drain [output] (b)Source [GND] (c)G
RD09MUP2 Datasheet (178.35 KB)
RD09MUP2
Mitsubishi Electric
178.35 KB
Silicon mosfet power transistor.
www.DataSheet4U.com
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD09MUP2
(a) 0.2+/-0.05 8.0+/-0.2 0.65+/.
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