RD09MUP2 Datasheet - Mitsubishi Electric

RD09MUP2, Silicon MOSFET Power Transistor

www.DataSheet4U.com MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD09MUP2 (a) 0.2+/-0.05 8.0+/-0.2 0.65+/

Features

* High power gain: Pout>8W, Gp>10dB@Vdd=7.2V,f=520MHz (4.5) 0.95+/-0.2 2.6+/-0.2
* High Efficiency: 50%min. (520MHz)
* Integrated gate protection diode INDEX MARK [Gate] TOP VIEW DETAIL A SIDE VIEW 1.8+/-0.1 BOTTOM VIEW Terminal No. (a)Drain [output] (b)Source [GND] (c)G

RD09MUP2_MitsubishiElectric.pdf