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MGF0921A LnS Band GaAs FET

MGF0921A Description

MITSUBISHI SEMICONDUCTOR MGF0921A L & S BAND GaAs FET [ SMD non * matched ] .
The MGF0921A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. High output power Po=33dBm(TYP.

MGF0921A Features

* High output power Po=33dBm(TYP. ) @f=1.9GHz,Pin=17dBm
* High power gain Gp=17dB(TYP. ) @f=1.9GHz
* High power added efficiency ηadd=40%(TYP. ) @f=1.9GHz,Pin=17dBm

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Datasheet Details

Part number
MGF0921A
Manufacturer
Mitsubishi
File Size
429.49 KB
Datasheet
MGF0921A_Mitsubishi.pdf
Description
LnS Band GaAs FET

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LnS Band GaAs FET Mitsubishi
Mitsubishi MGF0921A-like datasheet