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MGFC44V6472 - C band internally matched power GaAs FET

Datasheet Summary

Description

The MGFC44V6472 is an internally impedance-matched GaAs power FET especially designed for use in 6.4

7.2 GHz band amplifiers.

The hermetically sealed metal-ceramic package guarantees high reliability.

Features

  • Class A operation Internally matched to 50(ohm) system.
  • High output power P1dB=24W (TYP. ) @f=6.4.
  • 7.2GHz.
  • High power gain GLP=8.0dB (TYP. ) @f=6.4.
  • 7.2GHz.
  • High power added efficiency P. A. E. =31% (TYP. ) @f=6.4.
  • 7.2GHz.
  • Low distortion [item -51] IM3=-42dBc (TYP. ) @Po=33.5dBm S. C. L 2MIN 17.4 +/- 0.2 8.0 +/- 0.2 2MIN.

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Datasheet preview – MGFC44V6472

Datasheet Details

Part number MGFC44V6472
Manufacturer Mitsubishi
File Size 117.33 KB
Description C band internally matched power GaAs FET
Datasheet download datasheet MGFC44V6472 Datasheet
Additional preview pages of the MGFC44V6472 datasheet.

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< C band internally matched power GaAs FET > MGFC44V6472 6.4 – 7.2 GHz BAND / 24W DESCRIPTION The MGFC44V6472 is an internally impedance-matched GaAs power FET especially designed for use in 6.4 – 7.2 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES Class A operation Internally matched to 50(ohm) system  High output power P1dB=24W (TYP.) @f=6.4 – 7.2GHz  High power gain GLP=8.0dB (TYP.) @f=6.4 – 7.2GHz  High power added efficiency P.A.E.=31% (TYP.) @f=6.4 – 7.2GHz  Low distortion [item -51] IM3=-42dBc (TYP.) @Po=33.5dBm S.C.L 2MIN 17.4 +/- 0.2 8.0 +/- 0.2 2MIN OUTLINE R1.2 24 +/- 0.3 unit : mm 0.6 +/- 0.15 (1 ) (2 ) (3 ) APPLICATION  item 01 : 6.4 – 7.2 GHz band power amplifier  item 51 : 6.4 – 7.
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