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RD02MUS2 RoHS Compliance

RD02MUS2 Description

MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD02MUS2 0.2+/-0.05 (0.22) (0.22) (0.25) RoHS Compliance,Sil.
RD02MUS2 is a MOS FET type transistor specifically designed for VHF/UHF RF po -wer amplifiers applications.

RD02MUS2 Features

* High power gain: Pout>2W, Gp>16dB @Vdd=7.2V,f=175MHz,520MHz
* High Efficiency:65%typ. (175MHz)
* High Efficiency:65%typ. (520MHz)
* Integrated gate protection diode 3 (0.25) INDEX MARK (Gate) 0.2+/-0.05 0.9+/-0.1 Terminal No. 1.Drain (output) 2.Source (GND) 3.Gate (in

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Datasheet Details

Part number
RD02MUS2
Manufacturer
Mitsubishi Electric
File Size
279.97 KB
Datasheet
RD02MUS2_MitsubishiElectric.pdf
Description
RoHS Compliance

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RoHS Compliance Mitsubishi Electric
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