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MRF8S26120HSR3, MRF8S26120HR3 RF Power Field Effect Transistor

MRF8S26120HSR3 Description

Freescale Semiconductor Technical Data Document Number: MRF8S26120H www.DataSheet4U.com Rev.0, 6/2010 RF Power Field Effect Transistors N *.
22 μF, 35 V Tantalum Capacitor 330 nF, 100 V Chip Capacitor 15 nF, 100 V Chip Capacitor 2.

MRF8S26120HSR3 Features

* 100% PAR Tested for Guaranteed Output Power Capability
* Characterized with Series Equivalent Large
* Signal Impedance Parameters and Common Source S
* Parameters
* Internally Matched for Ease of Use
* Integrated ESD Protection
* Greater Negative

MRF8S26120HSR3 Applications

* with frequencies from 2620 to 2690 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
* Typical Single
* Carrier W
* CDMA Performance: VDD = 28 Volts, IDQ = 900 mA, Pout = 28 Watts Avg. , IQ Magnitude Clipping, Channel Bandwidth = 3.

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: MRF8S26120HSR3, MRF8S26120HR3. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
MRF8S26120HSR3, MRF8S26120HR3
Manufacturer
Motorola
File Size
534.11 KB
Datasheet
MRF8S26120HR3_Motorola.pdf
Description
RF Power Field Effect Transistor
Note
This datasheet PDF includes multiple part numbers: MRF8S26120HSR3, MRF8S26120HR3.
Please refer to the document for exact specifications by model.

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Power Field Effect Transistor Motorola
Motorola MRF8S26120HSR3-like datasheet