MRF8S7120NR3 - RF Power Field Effect Transistor

Motorola

The MRF8S7120NR3 by Motorola is a RF Power Field Effect Transistor. Below is the official datasheet preview.

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MRF8S7120NR3 RF Power Field Effect Transistor by Motorola - Datasheet Preview — Official preview page of the **MRF8S7120NR3** RF Power Field Effect Transistor datasheet (Motorola).

Datasheet Details

Part number	MRF8S7120NR3
Manufacturer	Motorola
File Size	462.81 KB
Description	RF Power Field Effect Transistor
Datasheet	MRF8S7120NR3_Motorola.pdf
Additional preview pages of the MRF8S7120NR3 datasheet.

MRF8S7120NR3 Product details

Description

Part Number MPZ2012S300AT000 ATC100B2R7BT500XT ATC100B101JT500XT ATC100B8R2CT500XT 476KXM050M ATC100B120JT500XT ATC100B5R6CT500XT ATC100B1R2BT500XT ATC100B390JT500XT C5750X7R1H106KT MCGPR63V477M13X26--RH ATC100B1R0BT500XT C4532X7R1H475MT CRCW12061K00FKEA CRCW12066R20JNEA TC350 TDK ATC ATC ATC Illinois Cap ATC ATC ATC ATC TDK Multicomp ATC TDK Vishay Vishay Arlon Manufacturer MRF8S7120NR3 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS ηD ηD, DRAIN EFFICIENCY (%) 21 20.6 20.2 G

Features

100% PAR Tested for Guaranteed Output Power Capability.
Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters.
Internally Matched for Ease of Use.
Integrated ESD Protection.
Greater Negative Gate--Source Voltage Range for Improved Class C Operation.
Designed for Digital Predistortion Error Correction Systems.
Optimized for Doherty.

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Published: Aug 14, 2010 |