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MRF8S7120NR3 RF Power Field Effect Transistor

MRF8S7120NR3 Description

Freescale Semiconductor Technical Data Document Number: MRF8S7120N www.DataSheet4U.com Rev.0, 5/2010 RF Power Field Effect Transistor N *Ch.
Part Number MPZ2012S300AT000 ATC100B2R7BT500XT ATC100B101JT500XT ATC100B8R2CT500XT 476KXM050M ATC100B120JT500XT ATC100B5R6CT500XT ATC100B1R2BT500XT AT.

MRF8S7120NR3 Features

* 100% PAR Tested for Guaranteed Output Power Capability
* Characterized with Series Equivalent Large
* Signal Impedance Parameters and Common Source S
* Parameters
* Internally Matched for Ease of Use
* Integrated ESD Protection
* Greater Negative

MRF8S7120NR3 Applications

* with frequencies from 728 to 768 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
* Typical Single
* Carrier W
* CDMA Performance: VDD = 28 Volts, IDQ = 600 mA, Pout = 32 Watts Avg. , IQ Magnitude Clipping, Channel Bandwidth = 3.84

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Datasheet Details

Part number
MRF8S7120NR3
Manufacturer
Motorola
File Size
462.81 KB
Datasheet
MRF8S7120NR3_Motorola.pdf
Description
RF Power Field Effect Transistor

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Power Field Effect Transistor Motorola
Motorola MRF8S7120NR3-like datasheet