Datasheet Specifications
- Part number
- BLS6G2731-120
- Manufacturer
- NXP ↗
- File Size
- 112.86 KB
- Datasheet
- BLS6G2731-120_PhilipsSemiconductors.pdf
- Description
- LDMOS S-band Radar Power Transistor
Description
www.DataSheet4U.com BLS6G2731-120; BLS6G2731S-120 LDMOS S-band radar power transistor Rev.01 * 14 November 2008 Product data sheet 1.Produ.
Features
* I Typical pulsed RF performance at a frequency of 2.7 GHz to 3.1 GHz, a supply voltage of 32 V, an IDq of 100 mA, a tp of 100 µs with δ of 10 %: N Output power = 120 W N Power gain = 13.5 dB N Efficiency = 48 % I Easy power control I Integrated ESD protection I High flexibility with respect to pulse fApplications
* in the 2.7 GHz to 3.1 GHz range. Table 1. Typical performance Typical RF performance at Tcase = 25 °C; tp = 100 µs; δ = 10 %; IDq = 100 mA; in a class-AB production test circuit. Mode of operation pulsed RF f (GHz) 2.7 to 3.1 VDS (V) 32 PL (W) 120 Gp (dB) 13.5 ηD (%) 48 tr (ns) 20 tf (ns) 6 CAUTIONBLS6G2731-120 Distributors
📁 Related Datasheet
📌 All Tags