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BLS6G2731-120

LDMOS S-band Radar Power Transistor

BLS6G2731-120 Features

* I Typical pulsed RF performance at a frequency of 2.7 GHz to 3.1 GHz, a supply voltage of 32 V, an IDq of 100 mA, a tp of 100 µs with δ of 10 %: N Output power = 120 W N Power gain = 13.5 dB N Efficiency = 48 % I Easy power control I Integrated ESD protection I High flexibility with respect to pulse f

BLS6G2731-120 Datasheet (112.86 KB)

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Datasheet Details

Part number:

BLS6G2731-120

Manufacturer:

NXP ↗

File Size:

112.86 KB

Description:

Ldmos s-band radar power transistor.
www.DataSheet4U.com BLS6G2731-120; BLS6G2731S-120 LDMOS S-band radar power transistor Rev. 01

* 14 November 2008 Product data sheet 1. Produ.

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BLS6G2731-120 LDMOS S-band Radar Power Transistor NXP

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