BLF6G20LS-110 Description
www.DataSheet4U.com BLF6G20-110; BLF6G20LS-110 Power LDMOS transistor Rev.01 * 28 January 2008 Preliminary data sheet 1.Product profile 1.1.
110 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.
BLF6G20LS-110 Features
* I Typical 2-carrier W-CDMA performance at frequencies of 1930 MHz and 1990 MHz, a supply voltage of 28 V and an IDq of 900 mA: N Average output power = 25 W N Power gain = 19 dB N Efficiency = 31 % N IMD3 =
* 37 dBc N ACPR =
* 40 dBc I Easy power control I Integrated ESD protection I Ex
BLF6G20LS-110 Applications
* at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit. Mode of operation 2-carrier W-CDMA
[1]
f (MHz) 1930 to 1990
VDS (V) 28
PL(AV) (W) 25
Gp (dB) 19
ηD (%) 31
IMD3 (dBc)
* 37[1]
ACPR
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